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| BSP30/31 BSP32/33 MEDIUM POWER AMPLIFIER ADVANCE DATA s s s s SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS GENERAL PURPOSE MAINLY INTENDED FOR USE IN MEDIUM POWER INDUSTRIAL APPLICATION AND FOR AUDIO AMPLIFIER OUTPUT STAGE NPN COMPLEMENTS ARE BSP40, BSP41, BSP42 AND BSP43 RESPECTIVELY 2 1 SOT-223 2 3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V CES V EBO IC IB P tot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Collector-Emitter Voltage (R BE = 1K) Emitter-Base Voltage (I C = 0) Collector Current Base Current Total Dissipation at T c = 25 o C Storage Temperature Max. Operating Junction Temperature -70 -60 -70 -5 -1 -0.1 2 -65 to 150 150 Value BSP30/BSP31 BSP32/BSP33 -90 -80 -90 V V V V A A W o o Unit C C 1/4 October 1995 BSP30/31/32/33 THERMAL DATA R thj-amb * R thj-tab * Thermal Resistance Junction-Ambient Thermal Resistance Junction-Collecor Tab Max Max 62.5 8 o o C/W C/W * Mounted on a ceramic substrate area = 30 x 35 x 0.7 mm ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO V (BR)CBO Parameter Collector Cut-off Current (I E = 0) Collector-Base Breakdown Voltage (IE = 0) Test Conditions V CB = -60 V V CB = -60 V T j = 150 C -70 -90 -60 -80 -70 -90 -5 o Min. Typ. Max. -100 -50 Unit nA A V V V V V V V I C = -100 A for BSP30/BSP31 for BSP32/BSP33 I C = -10 mA for BSP30/BSP31 for BSP32/BSP33 I C = -10 A for BSP30/BSP31 for BSP32/BSP33 I C = -10 A V (BR)CEO Collector-Emitter Breakdown Voltage (I B = 0) V (BR)CES Collector-Emitter Breakdown Voltage (V BE = 0) Emitter-Base Breakdown Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain V (BR)EBO V CE(sat) V BE(sat) h FE I C = -150 mA I C = -500 mA I C = -150 mA I C = -500 mA I B = -15 mA I B = -50 mA I B = -15 mA I B = -50 mA = -5 V = -5 V = -5 V = -5 V = -5 V = -5 V 10 40 30 30 50 50 100 -0.25 -0.5 -1 -1.2 V V V V for BSP30/BSP31 I C = -100 A V CE I C = -100 mA V CE I C = -500 mA V CE for BSP32/BSP33 I C = -100 A V CE I C = -100 mA V CE I C = -500 mA V CE IE = 0 IC = 0 120 300 MHz 20 120 500 650 pF pF ns ns fT C CBO C EBO t on t off Transition Frequency Collector-Base Capacitance Emitter-Base Capacitance Turn-on Time Turn-on Time I C = -50 mA V CE = -10 V f = 35 MHz V CB = -10 V V EB = -0.5 V f = 1 MHz f = 1 MHz I C = -100 mA I B1 = -I B2 = -5 mA Pulsed: Pulse duration = 300 s, duty cycle 1.5 % 2/4 BSP30/31/32/33 SOT223 MECHANICAL DATA mm MIN. a b c d e1 e4 f g l1 l2 L 2.9 0.67 6.7 3.5 6.3 3 0.7 7 3.5 6.5 2.27 4.57 0.2 0.63 1.5 TYP. 2.3 4.6 0.4 0.65 1.6 MAX. 2.33 4.63 0.6 0.67 1.7 0.32 3.1 0.73 7.3 3.7 6.7 114.2 26.4 263.8 137.8 248 118.1 27.6 275.6 137.8 255.9 MIN. 89.4 179.9 7.9 24.8 59.1 mils TYP. 90.6 181.1 15.7 25.6 63 MAX. 91.7 182.3 23.6 26.4 66.9 12.6 122.1 28.7 287.4 145.7 263.8 DIM. L l2 e1 a b f d c e4 C l1 B C E g P008B 3/4 BSP30/31/32/33 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1995 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . 4/4 |
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